Geological Literature
Selective Germanium Epitaxial Growth on Silicon Using CVD Technology with Ultra-pure Gases
KOBAYASHI Shin-ichi, CHENG Min-Lin, KOHLHASE Armin, SATO Taketoshi, MUROTA Junichi, MIKOSHIBA Nobuo
item | description |
---|---|
Title | Selective Germanium Epitaxial Growth on Silicon Using CVD Technology with Ultra-pure Gases |
Authors | KOBAYASHI Shin-ichi, CHENG Min-Lin, KOHLHASE Armin, SATO Taketoshi, MUROTA Junichi, MIKOSHIBA Nobuo |
Data name | Journal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth |
Volume | 99 |
Num | 1-4 |
Page | 259-262 |
Year | 1990 |
Publisher | North-Holland |
Language | EN |
Abstract language | EN |
ISSN | 00220248 |
GEOLIS URL | https://darc.gsj.jp/archives/detail?cls=geolis&pkey=199002336 |
DOI | 10.1016/0022-0248(90)90523-N |
@id | https://gbank.gsj.jp/ld/resource/geolis/199002336 |