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Selective Germanium Epitaxial Growth on Silicon Using CVD Technology with Ultra-pure Gases
KOBAYASHI Shin-ichi, CHENG Min-Lin, KOHLHASE Armin, SATO Taketoshi, MUROTA Junichi, MIKOSHIBA Nobuo
itemdescription
TitleSelective Germanium Epitaxial Growth on Silicon Using CVD Technology with Ultra-pure Gases
AuthorsKOBAYASHI Shin-ichi, CHENG Min-Lin, KOHLHASE Armin, SATO Taketoshi, MUROTA Junichi, MIKOSHIBA Nobuo
Data nameJournal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth
Volume99
Num1-4
Page259-262
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199002336
DOI10.1016/0022-0248(90)90523-N
@idhttps://gbank.gsj.jp/ld/resource/geolis/199002336