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In-Situ Observation of Impurity diffusion boundary Layer in Silicon Czochralski Growth
KAMIMOTO Koichi, EGUCHI Minoru, WATANABE Hisao, HIBIYA Taketoshi
itemdescription
TitleIn-Situ Observation of Impurity diffusion boundary Layer in Silicon Czochralski Growth
AuthorsKAMIMOTO Koichi, EGUCHI Minoru, WATANABE Hisao, HIBIYA Taketoshi
Data nameJournal of Crystal Growth, Crystal Growth 1989, Part 2, Proceedings of the Ninth International Conference on Crystal Growth
Volume99
Num1-4
Page665-669
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199001737
DOI10.1016/S0022-0248(08)80003-6
@idhttps://gbank.gsj.jp/ld/resource/geolis/199001737