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Low Temperature Epitaxial Growth of 3C-SiC on (111) Silicon Substrates
HIRABAYASHI Yasuo, KOBAYASHI Ken, KARASAWA Shiro
itemdescription
TitleLow Temperature Epitaxial Growth of 3C-SiC on (111) Silicon Substrates
AuthorsHIRABAYASHI Yasuo, KOBAYASHI Ken, KARASAWA Shiro
Data nameJournal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth
Volume99
Num1-4
Page284-286
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199000957
DOI10.1016/0022-0248(90)90528-S
@idhttps://gbank.gsj.jp/ld/resource/geolis/199000957