Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

Background pressure dependence of GaAs and AlGaAs growth rates in gas-source molecular beam epitaxy

Authors=SAITO Junji, MAEDA Takeshi, ONO Katsuji, KONDO Kazuo

Journal/Book_names=Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy

volume=111

number=1-4

pages=544-549

Publish_year=1991

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/0022-0248(91)91036-A

ID=199105725

@id=https://gbank.gsj.jp/ld/resource/geolis/199105725